?2002 fairchild semiconductor corporation sgr15n40l / sgu15n40l rev. a1 igbt sgr15n40l / sgu15n40l sgr15n40l / sgu15n40l general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for strobe applications features ? high input impedance ? high peak current capability (130a) ? easy gate drive absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics notes : (2) mounted on 1? square pcb (fr4 or g-10 material) symbol description sgr / sgu15n40l units v ces collector - emitter voltage 400 v v ges gate - emitter voltage 6v i cm (1) pulsed collector current 130 a p c m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c45 w t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case -- 3.0 c / w r ja (d-pak) thermal resistance, junction-to-ambient (pcb mount) (2) -- 50 c / w r ja (i-pak) thermal resistance, junction-to-ambient -- 110 c / w application strobe flash. g c e g c e d-pak g e c i-pak ge c
sgr15n40l / sgu15n40l rev. a1 sgr15n40l / sgu15n40l ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted * notes : recommendation of r g value : r g 15 ? symbol parameter test conditions min. typ. max. units off characteristics bv ces collector - emitter breakdown voltage v ge = 0v, i c = 1ma 450 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 10 ua i ges g - e leakage voltage v ge = v ges , v ce = 0v -- -- 0.1 ua on characteristics v ge(th) g - e threshold voltage i c = 1ma, v ce = v ge 0.5 1.0 1.4 v v ce(sat) c - e saturation current i c = 130a, v ge = 4.5v 2.0 4.5 8.0 v dynamic characteristics c ies input capacitance v ge = 0v, v ce = 30v, f = 1mhz -- 3000 -- pf c oes output capacitance -- 45 -- pf c res reverse transfer capacitance -- 30 -- pf switching characteristics t d(on) turn-on delay time v cc = 300v, i c = 130a, v ge = 4.5v, r g = 15 ? resistive load -- 0.08 -- us t r rise time -- 1.4 -- us t d(off) turn-off delay time -- 0.1 0.5 us t f fall time -- 1.1 2.0 us
sgr15n40l / sgu15n40l rev. a1 sgr15n40l / sgu15n40l ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. saturation voltage vs. case temperature at variant current level fig 3. saturation voltage vs. v ge fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 02468 0 30 60 90 120 150 180 4v 4.5v 3v 3.5v 5v v ge = 2.5v commom emitter t c = 25 collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 2 3 4 5 6 7 common emitter v ge = 4.5v 130a 100a i c = 70a collector-emitter voltage, v ce [v] case temperature, t c [ ] 0123456 0 2 4 6 8 10 130a 100a i c = 70a common emitter t c = -40 collector-emitter voltage, v ce [v] gate-emitter voltage , v ge [v] 0123456 0 2 4 6 8 10 common emitter t c = 25 130a 100a i c = 70a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0123456 0 2 4 6 8 10 130a 100a i c = 70a common emitter t c = 125 collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 010203040 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 cres coes cies capacitance [pf] collector-emitter voltage, v ce [v]
sgr15n40l / sgu15n40l rev. a1 sgr15n40l / sgu15n40l ?2002 fairchild semiconductor corporation fig 7. gate charge characteristics fig 8. collector current limit vs. gate - emitter voltage limit 0 102030405060 0 2 4 6 common emitter v cc = 300v, r l = 2.2 t c = 25 gate - emitter voltage, v ge [v] gate charge, q g [nc] 0246810 0 20 40 60 80 100 120 140 160 180 200 collector peak current, i cp [a] gate-emitter voltage, v ge [v]
?2002 fairchild semiconductor corporation sgr15n40l / sgu15n40l rev. a1 sgr15n40l / sgu15n40l package dimension 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak dimensions in millimeters
?2002 fairchild semiconductor corporation sgr15n40l / sgu15n40l rev. a1 sgr15n40l / sgu15n40l package dimension (continued) 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.10 2.30 0.20 (0.50) (0.50) (4.34) i-pak dimensions in millimeters
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product folder - fairchild p/n sgu15n40l - discrete, igbt fairchild semiconductor space space space search | parametric | cross reference | inventory space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgu15n40l discrete, igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging | application notes general description insulated gate bipolar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable for strobe applications back to top features l high input impedance l high peak current capability (130a) l easy gate drive back to top applications l strobe flash back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* inventory check & ordering package type leads packing method file:///d|/fair/pdf/sgu15n40l.html (1 of 2) [10/7/02 11:17:32 am]
product folder - fairchild p/n sgu15n40l - discrete, igbt SGU15N40LTU full production $1.88 purchase to-251(ipak) 3 rail * fairchild 1,000 piece budgetary pricing back to top application notes an-9006: an-9006 igbt application note for camera strobe (146 k) sep 27, 2002 back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///d|/fair/pdf/sgu15n40l.html (2 of 2) [10/7/02 11:17:32 am]
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